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| AO3414 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3414 is Pb-free (meets ROHS & Sony 259 specifications). AO3414L is a Green Product ordering option. AO3414 and AO3414L are electrically identical. Features VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50m (VGS = 4.5V) RDS(ON) < 63m (VGS = 2.5V) RDS(ON) < 87m (VGS = 1.8V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 8 4.2 3.2 15 1.4 0.9 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO3414 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=4.2A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=3.7A VGS=1.8V, ID=3.2A gFS VSD IS Forward Transconductance VDS=5V, ID=4.2A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.4 15 41 58 52 67 11 0.76 1 2 436 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 66 44 3 6.2 VGS=4.5V, VDS=10V, ID=4.2A 1.6 0.5 5.5 VGS=5V, VDS=10V, RL=2.7, RGEN=6 IF=4A, dI/dt=100A/s 6.3 40 12.7 12.3 3.5 50 70 63 87 0.6 Min 20 1 5 100 1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev4 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 8V 10 4.5V 8 2V ID(A) 3V 2.5V 6 4 4 VGS=1.5V 2 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 100 Normalized On-Resistance 1.8 VGS=2.5 1.6 1.4 1.2 1 0.8 0 4 8 12 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C IS (A) ID=4.2A 1E-01 1E-02 25C 1E-03 1E+01 1E+00 125C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=4.2A VGS=1.8V VGS=4.5V VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 0 VDS=5V 12 ID (A) 8 80 RDS(ON) (m) VGS=1.8V 60 VGS=2.5V 40 VGS=4.5V 20 Alpha & Omega Semiconductor, Ltd. AO3414 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=4.2A 800 Capacitance (pF) 600 Ciss 400 200 Coss Crss 0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C RDS(ON) limited 0.1s 20 100s 15 1ms Power (W) 10s TJ(Max)=150C TA=25C ID (Amps) 10.0 10 1.0 1s 10s 0.1 0.1 1 DC 10ms 5 10 VDS (Volts) 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 PD Ton T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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